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MAT02EH
MAT02EH
GP BJT MAT02EH
ADI
MAT02EH
--
Diodes, Transistors and Thyristors
GP BJT
MAT02EH.pdf
Specification
Product AttributeAttribute Value
HTS8542.33.00.01
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSiN
MountingThrough Hole
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width9.4(Max)
Package Height4.7(Max)
Package Length9.4(Max)
Product CategoryBipolar Power
Supplier PackageTO-78
Standard Package NameTO-78
SVHC Exceeds ThresholdYes
Minimum DC Current Gain500@1mA|500@100uA|400@10uA|300@1uA
Maximum Offset Voltage (mV)0.07
Number of Elements per Chip2
Maximum Power Dissipation (mW)1800
Maximum DC Collector Current (A)0.02
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)200(Typ)
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Maximum Collector-Emitter Saturation Voltage (V)0.1@100uA@1mA
Description
Trans GP BJT NPN 40V 0.02A 1800mW 6-Pin TO-78
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