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MJ15015G
MJ15015G
GP BJT MJ15015G
onsemi
MJ15015G
--
Diodes, Transistors and Thyristors
GP BJT
MJ15015G.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain10@4A@2V|5@10A@4V|20@4A@4V
Maximum Base Current (A)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Maximum DC Collector Current (A)15
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)200
Maximum Transition Frequency (MHz)6
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)120
Maximum Collector-Emitter Saturation Voltage (V)1.1@400mA@4A|3@3.3A@10A|5@7A@15A
Description
Trans GP BJT NPN 120V 15A 115000mW 3-Pin(2+Tab) TO-3 Tray
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