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MJD200G
MJD200G
GP BJT MJD200G
onsemi
MJD200G
--
Diodes, Transistors and Thyristors
GP BJT
MJD200G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain10@5A@2V|45@2A@1V|70@500mA@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)65(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)25
Maximum Base Emitter Saturation Voltage (V)2.5@1A@5A
Maximum Collector-Emitter Saturation Voltage (V)1.8@1A@5A|0.75@200mA@2A|0.3@50mA@500mA
Description
Trans GP BJT NPN 25V 5A 1400mW 3-Pin(2+Tab) DPAK Tube
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