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MJD50T4G
MJD50T4G
GP BJT MJD50T4G
onsemi
MJD50T4G
--
Diodes, Transistors and Thyristors
GP BJT
MJD50T4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain30@300mA@10V|10@1A@10V
Maximum Base Current (A)0.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)500
Maximum Transition Frequency (MHz)10(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)400
Maximum Collector-Emitter Saturation Voltage (V)1@0.2A@1A
Description
Trans GP BJT NPN 400V 1A 1560mW 3-Pin(2+Tab) DPAK T/R
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