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MJE13003G
MJE13003G
GP BJT MJE13003G
onsemi
MJE13003G
--
Diodes, Transistors and Thyristors
GP BJT
MJE13003G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain5@1A@2V|8@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)9
Maximum Transition Frequency (MHz)10(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1.2@0.25A@1A|1@0.1A@0.5A
Maximum Collector-Emitter Saturation Voltage (V)3@0.5A@1.5A|1@0.25A@1A|0.5@0.1A@0.5A
Description
Trans GP BJT NPN 400V 1.5A 1400mW 3-Pin(3+Tab) TO-225 Box
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