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MMBT2132T1
MMBT2132T1
GP BJT MMBT2132T1
onsemi
MMBT2132T1
--
Diodes, Transistors and Thyristors
GP BJT
MMBT2132T1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width1.5
Package Height0.94
Package Length3
Product CategoryBipolar Power
Supplier PackageSC-74
Standard Package NameSC
SVHC Exceeds ThresholdYes
Minimum DC Current Gain150@100mA@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)665
Maximum DC Collector Current (A)0.7
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.1@70mA@700mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@50mA@500mA|0.4@70mA@700mA
Description
Trans GP BJT NPN 30V 0.7A 665mW 6-Pin SC-74 T/R
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