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MMBT2222AF065
MMBT2222AF065
GP BJT MMBT2222AF065
onsemi
MMBT2222AF065
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.93
Package Length2.92
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|50@150mA@10V|40@500mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Transition Frequency (MHz)300(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)10
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 40V 1A 350mW 3-Pin SOT-23 T/R
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