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MSB92ASWT1G
MSB92ASWT1G
GP BJT MSB92ASWT1G
onsemi
MSB92ASWT1G
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Diodes, Transistors and Thyristors
GP BJT
MSB92ASWT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT
Minimum DC Current Gain120@1mA@10V|40@10mA@10V|25@30mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)0.9@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@2mA@20mA
Description
Trans GP BJT PNP 300V 0.5A 150mW 3-Pin SC-70 T/R
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