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MMBTA56LT1
MMBTA56LT1
GP BJT MMBTA56LT1
onsemi
MMBTA56LT1
--
Diodes, Transistors and Thyristors
GP BJT
MMBTA56LT1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Description
Trans GP BJT PNP 80V 0.5A 300mW 3-Pin SOT-23 T/R
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