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MMDT3946FL3-7
MMDT3946FL3-7
GP BJT MMDT3946FL3-7
Diodes Incorporated
MMDT3946FL3-7
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1
Package Height0.28
Package Length1.3
Product CategoryBipolar Small Signal
Supplier PackageX2-DFN
Minimum DC Current Gain100@10mA@1V|60@50mA@1V|30@100mA@1V@PNP|40@100uA@1V|80@1mA@1V|70@1mA@1V|30@100mA@1V@NPN|60@100uA@1V
Number of Elements per Chip2
Maximum Power Dissipation (mW)370
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60@NPN|40@PNP
Maximum Transition Frequency (MHz)300(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA|0.95@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.3@5mA@50mA@NPN|0.25@1mA@10mA|0.4@5mA@50mA@PNP
Description
Trans GP BJT NPN/PNP 40V 0.2A 370mW 6-Pin X2-DFN T/R
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