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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MMDT5451-7-F
MMDT5451-7-F
GP BJT MMDT5451-7-F
Diodes Incorporated
MMDT5451-7-F
--
Diodes, Transistors and Thyristors
GP BJT
MMDT5451-7-F.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1.3
Package Height0.95
Package Length2.15
Product CategoryBipolar Small Signal
Supplier PackageSOT-363
Standard Package NameSOT-26
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V@NPN|50@1mA@5V|60@10mA@5V|50@50mA@5V@PNP
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)320
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)6@NPN|5@PNP
Maximum Collector Base Voltage (V)180@NPN|160@PNP
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)160@NPN|150@PNP
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA@NPN|0.2@1mA@10mA|0.5@5mA@50mA@PNP
Description
Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R
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