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MMPQ3467
MMPQ3467
GP BJT MMPQ3467
onsemi
MMPQ3467
--
Diodes, Transistors and Thyristors
GP BJT
MMPQ3467.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count16
AutomotiveNo
Lead ShapeGull-wing
PCB changed16
Part StatusObsolete
ConfigurationQuad
Package Width4(Max)
Package Height1.5(Max)
Package Length10(Max)
Product CategoryBipolar Power
Supplier PackageSOIC
Standard Package NameSOP
Minimum DC Current Gain20@500mA@1V
Number of Elements per Chip4
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)190(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 40V 1A 1200mW 16-Pin SOIC Tube
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