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2N6692
2N6692
GP BJT 2N6692
Microchip Technology
2N6692
--
Diodes, Transistors and Thyristors
GP BJT
2N6692.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MountingStud
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width17.45(Max)
Package Height23.24(Max)
Package Length20.14(Max)
Product CategoryBipolar Power
Supplier PackageTO-61
Number of Elements per Chip1
Maximum Power Dissipation (mW)175000
Maximum DC Collector Current (A)15
Maximum Emitter Base Voltage (V)8
Maximum Collector-Emitter Voltage (V)350
Maximum Collector-Emitter Saturation Voltage (V)1.5@3mA@15mA
Description
Trans GP BJT NPN 350V 15A 175000mW 3-Pin TO-61 Tray
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