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MSD602-RT1G
MSD602-RT1G
GP BJT MSD602-RT1G
onsemi
MSD602-RT1G
--
Diodes, Transistors and Thyristors
GP BJT
MSD602-RT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.5
Package Height1.09
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain40@500mA@10V|120@150mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)0.6@30mA@300mA
Description
Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R
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