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NSS12200LT1G
NSS12200LT1G
GP BJT NSS12200LT1G
onsemi
NSS12200LT1G
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Diodes, Transistors and Thyristors
GP BJT
NSS12200LT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain250@10mA@2V|200@1A@2V|150@2A@2V|250@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)540
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)12
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.011@0.01A@0.1A|0.09@0.1A@1A|0.12@0.01A@1A|0.18@0.2A@2A
Description
Trans GP BJT PNP 12V 2A 540mW 3-Pin SOT-23 T/R
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