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NSS40300MDR2G
NSS40300MDR2G
GP BJT NSS40300MDR2G
onsemi
NSS40300MDR2G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
ConfigurationDual Dual Collector
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryBipolar Small Signal
Supplier PackageSOIC N
Standard Package NameSOP
Minimum DC Current Gain250@10mA@2V|220@500mA@2V|180@1A@2V|150@2A@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)783
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.017@0.01A@0.1A|0.095@0.1A@1A|0.17@0.01A@1A|0.17@0.2A@2A
Description
Trans GP BJT PNP 40V 3A 783mW 8-Pin SOIC N T/R
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