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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSS40600CF8T1G
NSS40600CF8T1G
GP BJT NSS40600CF8T1G
onsemi
NSS40600CF8T1G
--
Diodes, Transistors and Thyristors
GP BJT
NSS40600CF8T1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusActive
ConfigurationSingle Hex Collector
Package Width1.65
Package Height1.05
Package Length3.05
Product CategoryBipolar Power
Supplier PackageChip FET
Standard Package NameChip FET
Minimum DC Current Gain250@10mA@2V|250@500mA@2V|220@1A@2V|180@2A@2V|150@3A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.01@0.01A@0.1A|0.075@0.1A@1A|0.11@0.01A@1A|0.2@0.2A@2A|0.25@0.03A@3A|0.22@0.4A@4A
Description
Trans GP BJT PNP 40V 6A 1400mW 8-Pin Chip FET T/R
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