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GP BJT NSV1C300ET4G-VF01
onsemi
NSV1C300ET4G-VF01
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | LTB |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 180@0.1A@2V|180@500mA@2V|120@1A@2V|50@3A@2V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 140 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@0.1A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.07@10mA@0.1A|0.15@0.1A@1A|0.25@0.2A@2A|0.4@0.3A@3A |
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