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NSV2SC5658M3T5G
NSV2SC5658M3T5G
GP BJT NSV2SC5658M3T5G
onsemi
NSV2SC5658M3T5G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.5
Package Length1.2
Product CategoryBipolar Small Signal
Supplier PackageSOT-723
Standard Package NameSOT-723
Minimum DC Current Gain120@1mA@6V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)260
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)500
Maximum Collector-Emitter Saturation Voltage (V)0.4@5mA@50mA
Description
Trans GP BJT NPN 50V 0.15A 260mW Automotive 3-Pin SOT-723 T/R
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