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GP BJT NSV60600MZ4T1G
onsemi
NSV60600MZ4T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 3.5 |
| Package Height | 1.57 |
| Package Length | 6.5 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Standard Package Name | SOT |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 70@6A@2V|150@500mA@2V|100@2A@2V|120@1A@2V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@0.1A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.12@0.2A@2A|0.25@60mA@3A|0.35@0.6A@6A|0.05@2mA@0.1A|0.07@0.1A@1A |
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