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NSVBC857BTT1G
NSVBC857BTT1G
GP BJT NSVBC857BTT1G
onsemi
NSVBC857BTT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.75
Package Length1.6
Product CategoryBipolar Small Signal
Supplier PackageSOT-416
Standard Package NameSOT
Minimum DC Current Gain220@2mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.5mA@10mA|0.65@5mA@100mA
Description
Trans GP BJT PNP 45V 0.1A 300mW Automotive 3-Pin SOT-416 T/R
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