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NSVEMT1DXV6T5G
NSVEMT1DXV6T5G
GP BJT NSVEMT1DXV6T5G
onsemi
NSVEMT1DXV6T5G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeFlat
PCB changed6
Part StatusLTB
ConfigurationDual
Package Width1.2
Package Height0.55
Package Length1.6
Product CategoryBipolar Small Signal
Supplier PackageSOT-563
Standard Package NameSOT
Minimum DC Current Gain120@1mA@6V
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)0.5
Maximum Collector-Emitter Saturation Voltage (V)0.5@5mA@50mA
Description
Trans GP BJT PNP 60V 0.1A 500mW Automotive 6-Pin SOT-563 T/R
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