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NSVMMBT5401WT1G
NSVMMBT5401WT1G
GP BJT NSVMMBT5401WT1G
onsemi
NSVMMBT5401WT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT-323
Minimum DC Current Gain60@10mA@5V|50@50mA@5V|50@1mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.5@5mA@50mA
Description
Trans GP BJT PNP 150V 0.5A 400mW Automotive 3-Pin SC-70 T/R
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