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NZT6729
NZT6729
GP BJT NZT6729
onsemi
NZT6729
--
Diodes, Transistors and Thyristors
GP BJT
NZT6729.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
Minimum DC Current Gain80@50mA@1V|50@250mA@1V|20@500mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@250mA|0.35@25mA@250mA
Description
Trans GP BJT PNP 80V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
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