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PBSS4260PANPSX
PBSS4260PANPSX
GP BJT PBSS4260PANPSX
Nexperia
PBSS4260PANPSX
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypePNP|NPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationDual
Package Width2
Package Height0.61(Max)
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageDFN-D EP
Minimum DC Current Gain120@1A@2V|210@500mA@2V|250@100mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)960
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)100(Typ)@PNP|140(Typ)@NPN
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@50mA@0.5A|1.1@50mA@1A|1.25@200mA@2A@PNP|1.3@200mA@2A@NPN
Maximum Collector-Emitter Saturation Voltage (V)0.5@200mA@2A@PNP|0.31@50mA@1A|0.14@50mA@0.5A|0.35@200mA@2A@NPN|0.2@50mA@1A|0.1@50mA@0.5A
Description
Trans GP BJT NPN/PNP 60V 2A 960mW Automotive 6-Pin DFN-D EP T/R
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