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PBSS5130QAZ
PBSS5130QAZ
GP BJT PBSS5130QAZ
Nexperia
PBSS5130QAZ
--
Diodes, Transistors and Thyristors
GP BJT
PBSS5130QAZ.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategoryBipolar Power
Supplier PackageDFN-D EP
Minimum DC Current Gain250@100mA@2V|180@500mA@2V|130@1A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)170(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.05@50mA@1A|1.1@100mA@1A|1@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.13@50mA@500mA|0.26@50mA@1A|0.24@100mA@1A
Description
Trans GP BJT PNP 30V 1A 1000mW Automotive 3-Pin DFN-D EP T/R
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