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PHPT60606NY
PHPT60606NY
GP BJT PHPT60606NY
NXP
PHPT60606NY
--
Diodes, Transistors and Thyristors
GP BJT
PHPT60606NY.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count5
AutomotiveYes
PCB changed4
Part StatusActive
ConfigurationSingle Triple Emitter
Package Width4.1(Max)
Package Height1.1(Max)
Package Length5(Max)
Product CategoryBipolar Power
Supplier PackageLFPAK
SVHC Exceeds ThresholdYes
Minimum DC Current Gain240@500mA@2V|210@1A@2V|100@3A@2V|40@6A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.95@50mA@1A|1.15@300mA@3A|1.2@300mA@6A
Maximum Collector-Emitter Saturation Voltage (V)0.075@50mA@1A|0.16@300mA@3A|0.36@300mA@6A
Description
Trans GP BJT NPN 60V 6A 25000mW Automotive 5-Pin(4+Tab) LFPAK
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