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SMMBT2222AWT1G
SMMBT2222AWT1G
GP BJT SMMBT2222AWT1G
onsemi
SMMBT2222AWT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Transition Frequency (MHz)300(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 40V 0.6A 150mW Automotive 3-Pin SC-70 T/R
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