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SMSD602-RT1G
SMSD602-RT1G
GP BJT SMSD602-RT1G
onsemi
SMSD602-RT1G
--
Diodes, Transistors and Thyristors
GP BJT
SMSD602-RT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.5
Package Height1.09
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain120@150mA@10V|40@500mA@10V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)0.6@30mA@300mA
Description
Trans GP BJT NPN 50V 0.5A 200mW Automotive 3-Pin SC-59 T/R
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