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SS8050DBU
SS8050DBU
GP BJT SS8050DBU
onsemi
SS8050DBU
--
Diodes, Transistors and Thyristors
GP BJT
SS8050DBU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain160@100mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@80mA@800mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@80mA@800mA
Description
Trans GP BJT NPN 25V 1.5A 1000mW 3-Pin TO-92 Bag
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