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SS9012HBU
SS9012HBU
GP BJT SS9012HBU
onsemi
SS9012HBU
--
Diodes, Transistors and Thyristors
GP BJT
SS9012HBU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain144@50mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@50mA@500mA
Description
Trans GP BJT PNP 20V 0.5A 625mW 3-Pin TO-92 Bag
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