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TN6717A
TN6717A
GP BJT TN6717A
onsemi
TN6717A
--
Diodes, Transistors and Thyristors
GP BJT
TN6717A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.93(Max)
Package Height7.87(Max)
Package Length4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-226
Minimum DC Current Gain80@50mA@1V|50@250mA@1V|20@500mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.35@10mA@250mA
Description
Trans GP BJT NPN 80V 1.2A 1000mW 3-Pin TO-226 Bulk
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