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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ZTX689BSTZ
ZTX689BSTZ
GP BJT ZTX689BSTZ
Diodes Incorporated
ZTX689BSTZ
--
Diodes, Transistors and Thyristors
GP BJT
ZTX689BSTZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
Minimum DC Current Gain500@100mA@2V|400@2A@2V|150@6A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)20
Maximum Transition Frequency (MHz)150(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Base Emitter Saturation Voltage (V)0.9@10mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.1@0.5mA@0.1A|0.5@10mA@2A
Description
Trans GP BJT NPN 20V 3A 1000mW 3-Pin E-Line Box
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