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GP BJT ZXT13N50DE6TA
Diodes Incorporated
ZXT13N50DE6TA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single Quad Collector |
| Package Width | 1.8(Max) |
| Package Height | 1.3(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 250@10mA@2V|300@1A@2V|100@4A@2V|10@10A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 7.5 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 115(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@100mA@4A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.012@10mA@0.1A|0.1@10mA@1A|0.2@50mA@3A|0.23@100mA@4A|0.18@400mA@4A |
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