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GP BJT ZXTC2062E6TA
Diodes Incorporated
ZXTC2062E6TA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1.1 |
| Package Length | 3 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-26 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 300@10mA@2V|280@1A@2V|140@4A@2V@NPN|170@1A@2V|65@3.5A@2V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum DC Collector Current (A) | 4@NPN|3.5@PNP |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 100@NPN|25@PNP |
| Maximum Transition Frequency (MHz) | 215(Typ)@NPN|290(Typ)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.05@200mA@4A@NPN|1@175mA@3.5A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.05@100mA@1A|0.075@20mA@1A|0.115@40mA@2A|0.19@200mA@4A@NPN|0.065@100mA@1A|0.135@20mA@1A|0.28@40mA@2A|0.25@175mA@3.5A@PNP |
| Description |
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