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AFGHL40T65SQ
AFGHL40T65SQ
IGBT Chip AFGHL40T65SQ
onsemi
AFGHL40T65SQ
--
Diodes, Transistors and Thyristors
IGBT Chip
AFGHL40T65SQ.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveYes
TechnologyField Stop|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height20.57
Package Length15.62
Supplier PackageTO-247
SVHC Exceeds ThresholdYes
Supplier Temperature GradeAutomotive
Maximum Power Dissipation (mW)239000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 650V 80A 239000mW Automotive 3-Pin(3+Tab) TO-247 Rail
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