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APT65GP60L2DQ2G
APT65GP60L2DQ2G
IGBT Chip APT65GP60L2DQ2G
Microchip Technology
APT65GP60L2DQ2G
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height26.49(Max)
Package Length20.5(Max)
Supplier PackageTO-264 MAX
Maximum Power Dissipation (mW)833
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)198
Maximum Gate Emitter Leakage Current (uA)0.1
Description
Trans IGBT Chip N-CH 600V 198A 833mW 3-Pin(3+Tab) TO-264 MAX Tube
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