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SGR6N60UFTF
SGR6N60UFTF
IGBT Chip SGR6N60UFTF
onsemi
SGR6N60UFTF
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Diodes, Transistors and Thyristors
IGBT Chip
SGR6N60UFTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Standard Package NameTO-252
Maximum Power Dissipation (mW)30000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)6
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)2.6
Description
Trans IGBT Chip N-CH 600V 6A 30000mW 3-Pin(2+Tab) DPAK T/R
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