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BIDW20N60T
BIDW20N60T
IGBT Chip BIDW20N60T
Bourns
BIDW20N60T
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Diodes, Transistors and Thyristors
IGBT Chip
BIDW20N60T.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
TechnologyField Stop|Trench
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)192
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)40
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Chip N-CH 600V 40A 192mW Tube
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