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BUP314
BUP314
IGBT Chip BUP314
Infineon
BUP314
--
Diodes, Transistors and Thyristors
IGBT Chip
BUP314.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.9
Package Height12.5
Package Length15
Supplier PackageTO-218AB
Standard Package NameTO-218AB
Maximum Power Dissipation (mW)300000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)52
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Chip N-CH 1200V 52A 300000mW 5-Pin(5+Tab) TO-218AB
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