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IGBT Chip FGAF30S65AQ
onsemi
FGAF30S65AQ
--
Diodes, Transistors and Thyristors
IGBT Chip
FGAF30S65AQ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)83000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.4
Description
Trans IGBT Chip N-CH 650V 60A 83000mW Tube
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