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IGBT Chip STGW80H65DFB-4
STMicroelectronics
STGW80H65DFB-4
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | Field Stop|Trench |
| PCB changed | 4 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Single Dual Emitter |
| Package Width | 5 |
| Package Height | 21 |
| Package Length | 15.8 |
| Supplier Package | TO-247 |
| Standard Package Name | TO-247 |
| Maximum Power Dissipation (mW) | 469000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 120 |
| Maximum Gate Emitter Leakage Current (uA) | 0.25 |
| Typical Collector Emitter Saturation Voltage (V) | 1.6 |
| Description |
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