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FGH30N120FTDTU
FGH30N120FTDTU
IGBT Chip FGH30N120FTDTU
onsemi
FGH30N120FTDTU
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height20.6
Package Length15.6
Supplier PackageTO-247AB
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)339000
Maximum Gate Emitter Voltage (V)±25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 1200V 60A 339000mW 3-Pin(3+Tab) TO-247AB Rail
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