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FGHL40T65MQDT
FGHL40T65MQDT
IGBT Chip FGHL40T65MQDT
onsemi
FGHL40T65MQDT
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
PackagingTube
AutomotiveNo
TechnologyField Stop|Trench
Part StatusActive
Channel TypeN
ConfigurationSingle
Maximum Power Dissipation (mW)238000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)60
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 650V 60A 238000mW Tube
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