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IGBT Chip FGHL75T65MQD
onsemi
FGHL75T65MQD
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Diodes, Transistors and Thyristors
IGBT Chip
FGHL75T65MQD.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
TechnologyTrench|Field Stop
Part StatusActive
Channel TypeN
ConfigurationSingle
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)375000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)80
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.45
Description
Trans IGBT Chip N-CH 650V 80A 375000mW Tube
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