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IGC99T120T8RLX1SA3
IGC99T120T8RLX1SA3
IGBT Chip IGC99T120T8RLX1SA3
Infineon
IGC99T120T8RLX1SA3
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
Pin Count3
AutomotiveNo
TechnologyField Stop|Trench
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width9.5
Package Height0.12
Package Length10.35
Supplier PackageDie
Standard Package NameDie
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Gate Emitter Leakage Current (uA)0.12
Typical Collector Emitter Saturation Voltage (V)1.8
Description
Trans IGBT Chip N-CH 1200V 3-Pin Die Wafer
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