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SIGC42T120CSX1SA2
SIGC42T120CSX1SA2
IGBT Chip SIGC42T120CSX1SA2
Infineon
SIGC42T120CSX1SA2
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingWafer
AutomotiveNo
TechnologyNPT
Part StatusNRND
Channel TypeN
ConfigurationSingle
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)25
Maximum Gate Emitter Leakage Current (uA)0.12
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Chip N-CH 1200V 25A Wafer
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