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IGP40N65H5XKSA1
IGP40N65H5XKSA1
IGBT Chip IGP40N65H5XKSA1
Infineon
IGP40N65H5XKSA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Supplier PackageTO-220
Standard Package NameTO-220
Maximum Power Dissipation (mW)255000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)74
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.654
Description
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-220 Tube
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