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IGBT Chip IHD10N60RABUMA1
Infineon
IHD10N60RABUMA1
--
Diodes, Transistors and Thyristors
IGBT Chip
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22 |
| Package Height | 2.3 |
| Package Length | 6.5 |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| Maximum Power Dissipation (mW) | 110000 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 20 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.45 |
| Description |
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