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IKD06N60RBTMA1
IKD06N60RBTMA1
IGBT Chip IKD06N60RBTMA1
Infineon
IKD06N60RBTMA1
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
TechnologyTrench Stop
PCB changed2
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Width6.22
Package Height2.3
Package Length6.5
Supplier PackageDPAK
Standard Package NameTO-252
Maximum Power Dissipation (mW)100000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)12
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.65
Description
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK
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